Title:
PHOTORESIST MONOMER, PHOTORESIST POLYMER AND ITS MANUFACTURING METHOD, PHOTORESIST COMPOSITION, PHOTORESIST PATTERN FORMING METHOD, AND SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3946449
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a photoresist monomer suitably used for a bilayer resist and a photoresist polymer containing such a monomer.
SOLUTION: The photoresist polymer comprises a compound bearing a silicon-containing group of chemical formula (4), an alicyclic compound bearing a protective group sensitive to an acid, and a diacrylate compound as a crosslinking monomer. The photoresist polymer containing an appropriate amount of a silicon element exhibits remarkably improved etching resistance, and therefore is not only suitable for a thin resist process and a process where a bilayer resist is used but also capable of remarkably increasing a contrast ratio between an exposed area and a non-exposed area.
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Inventors:
Lee Nemori
Chung Zhao Chang
Chung Min Ho
White base ho
Chung Zhao Chang
Chung Min Ho
White base ho
Application Number:
JP2001042125A
Publication Date:
July 18, 2007
Filing Date:
February 19, 2001
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C07F7/18; C08F230/08; C08F2/48; C08F30/08; C08F220/20; C08F222/06; C08F232/00; C08F232/04; C08K5/00; C08L33/04; C08L35/00; C08L43/04; C08L45/00; G03F7/004; G03F7/039; G03F7/075; G03F7/11; G03F7/26; H01L21/027; (IPC1-7): C08F230/08; C07F7/18; C08F2/48; C08F220/20; C08F222/06; C08F232/00; C08F232/04; C08K5/00; C08L33/04; C08L35/00; C08L43/04; C08L45/00; G03F7/039; G03F7/075; G03F7/11; G03F7/26; H01L21/027
Domestic Patent References:
| JP2001158808A | ||||
| JP3200807A | ||||
| JP62073250A | ||||
| JP2000038391A |
Foreign References:
| WO1986001219A1 | ||||
| WO2000003303A1 |
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune
Yoshio Arafune