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Patent Searching and Data


Title:
PHOTORESIST MONOMER, PHOTORESIST POLYMER, MANUFACTURING METHOD OF PHOTORESIST POLYMER, PHOTORESIST COMPOSITION, PHOTORESIST PATTERN-FORMING METHOD, AND SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP3641748
Kind Code:
B2
Abstract:

PROBLEM TO BE SOLVED: To provide a photoresist monomer which can be used with a VUV (157 nm) light source, and a photoresist polymer.
SOLUTION: The photoresist monomer is represented by formula (1) (wherein X1, X2, R1, 1 and m are as defined in the specification). The polymer of the photoresist monomer and the photoresist composition containing the photoresist polymer are also provided.


Inventors:
Lee Nemori
Chung Zhao Chang
Request
Application Number:
JP2002164520A
Publication Date:
April 27, 2005
Filing Date:
June 05, 2002
Export Citation:
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Assignee:
HYNIX SEMICONDUCTOR INC.
International Classes:
C07C69/753; C08F222/00; C08F232/08; C08F234/02; G03F7/004; G03F7/039; H01L21/027; (IPC1-7): C08F232/08; C07C69/753; C08F222/00; C08F234/02; G03F7/039; H01L21/027
Domestic Patent References:
JP2002249520A
JP2003055408A
JP11349637A
JP4045113A
JP2000186118A
Attorney, Agent or Firm:
Hiroshi Arafune
Yoshio Arafune