PHOTORESIST MONOMER, PHOTORESIST POLYMER, METHOD FOR PRODUCING PHOTORESIST POLYMER, PHOTORESIST COMPOSITION, METHOD FOR FORMING PHOTORESIST PATTERN, AND SEMICONDUCTOR DEVICE

Title:

PHOTORESIST MONOMER, PHOTORESIST POLYMER, METHOD FOR PRODUCING PHOTORESIST POLYMER, PHOTORESIST COMPOSITION, METHOD FOR FORMING PHOTORESIST PATTERN, AND SEMICONDUCTOR DEVICE

Document Type and Number:

Japanese Patent JP2003020315

Kind Code:

A

Abstract:

To provide a photoresist monomer and a photoresist polymer usable even for a VUV (157 nm) light source.

The photoresist monomer is represented by formula (1) (wherein X1, X2, R1, R2, and R3 are the same as defined in the specification), and the photoresist polymer is a polymer of this photoresist monomer, and the photoresist composition uses the polymer.

Inventors:

LEE GEUN SU
JUNG JAE CHANG
JUNG MIN HO
KOH CHA WON
SHIN KI SOO

Application Number:

JP2002109507A

Publication Date:

January 24, 2003

Filing Date:

April 11, 2002

Export Citation:

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Assignee:

HYNIX SEMICONDUCTOR INC

International Classes:

G03F7/033; C08F210/04; C08F220/10; C08F222/40; C08F232/08; G03F7/004; G03F7/039; H01L21/027; (IPC1-7): C08F222/40; C08F210/04; C08F220/10; C08F232/08; G03F7/033; G03F7/039; H01L21/027

Attorney, Agent or Firm:

Hiroshi Arafune (1 person outside)

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