Title:
PHOTORESIST POLYMER, METHOD FOR PRODUCING THE SAME, PHOTORESIST COMPOSITION USING THE POLYMER, METHOD FOR FORMING PHOTORESIST PATTERN AND SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2002053623
Kind Code:
A
Abstract:
To obtain a photoresist polymer suitably useful as a bilayer resist.
This photoresist polymer comprises a compound containing a silicon-containing functional group represented by formula (4) (R1, R2, R3 and R4 are each hydrogen, a 1-10C alkyl or an ether group (-O-)-containing 1-10C alkyl). The photoresist polymer containing a proper amount of silicon element has largely improved etching resistance and is not only suitable for a thin resist process and a process using a bilayer resist but also can extremely increase a contract ratio between a development area and a nondevelopment area.
Inventors:
Lee, Geun SU
Jung, Jae Chang
Jung, Min HO
Baik, KI HO
Jung, Jae Chang
Jung, Min HO
Baik, KI HO
Application Number:
JP2001000188341
Publication Date:
February 19, 2002
Filing Date:
June 21, 2001
Export Citation:
Assignee:
HYNIX SEMICONDUCTOR INC
International Classes:
G03F7/004; C08F220/28; C08F230/08; C08K5/00; C08L101/02; G03F7/031; G03F7/039; G03F7/075; G03F7/095; G03F7/11; G03F7/26; H01L21/027; G03F7/004; C08F220/00; C08F230/00; C08K5/00; C08L101/00; G03F7/031; G03F7/039; G03F7/075; G03F7/095; G03F7/11; G03F7/26; H01L21/02; (IPC1-7): C08F230/08; C08F220/28; C08K5/00; C08L101/02; G03F7/004; G03F7/039; G03F7/075; G03F7/11; G03F7/26; H01L21/027