Title:
PHOTORESIST POLYMER, PRODUCTION PROCESS THEREFOR, PHOTORESIST COMPOSITION, METHOD FOR FORMING PHOTORESIST PATTERN AND SEMICONDUCTOR ELEMENT
Document Type and Number:
Japanese Patent JP2001106737
Kind Code:
A
Abstract:
To provide a photoresist resin composition that can improve the pattern appearance and has excellent durability and shows excellent durability, etching resistance, reproducibility, high resolving power and adhesion.
The objective photoresist composition includes the photoresist polymer having a crosslinkable monomer represented by formula (1) R1, R2, R3, R4, R5, R6, R7 and R8 are defined by the specification.
Inventors:
LEE GEUN SU
JUNG JAE CHANG
BAIK KI HO
JUNG JAE CHANG
BAIK KI HO
Application Number:
JP2000252762A
Publication Date:
April 17, 2001
Filing Date:
August 23, 2000
Export Citation:
Assignee:
HYUNDAI ELECTRONICS IND
International Classes:
C08F222/06; C08F232/00; C08K5/00; C08L35/00; C08L45/00; C08L101/06; G03F7/004; G03F7/039; G03F7/20; G03F7/38; H01L21/027; (IPC1-7): C08F232/00; C08F222/06; C08K5/00; C08L101/06; G03F7/039; H01L21/027
Attorney, Agent or Firm:
Hiroshi Arafune (1 person outside)