To provide a novel compound that can economically produce a larger amount of ArF or KrF-sensitive membrane resin polymer having excellent etching resistance and adhesion of photosensitizer thereto, and is useful as a photoresist in the lithography process in which ArF or KrF light source is utilized in the production of fine circuits for highly integrated semiconductor elements.
This compound is represented by the formula (R1 and R2 are each H, a 1-4C alkyl; m is 1-4), typically 2-hydroxyethyloxabicyclo[2.2.1]hepto-5- ene-2-carboxylate. This compound is prepared by dissolving furan in an organic solvent and allowing the furan to react with a hydroxyacrylate and removing the solvent from the reaction mixture. In a preferred embodiment, the molar ratio of the hydroxy-acrylate to furan is in the range of 1/(1-1.5). Toluene, tetrahydrofuran or the like is preferably used as an organic solvent.
ROH CHI HYEONG
JUNG MIN HO
BAIK KI HO
LEE GEUN SU
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