PHOTOSENSITIVE FILM COPOLYMER, METHOD FOR PRODUCING PHOTOSENSITIVE FILM COPOLYMER, PHOTOSENSITIVE FILM, METHOD FOR PRODUCING PHOTOSENSITIVE FILM, METHOD FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

Japanese Patent JP2007146182

A

To provide an ArF photosensitive film resin having etching resistance, heat resistance and adhesive strength and not easily dissolved in a developing solution, to provide a method for producing the resin, to provide a copolymer used for the new ArF photosensitive resin, to provide a method for producing the copolymer, to provide a photosensitive film, to provide a method for producing the film, to provide a semiconductor device using a photoresist containing the ArF photosensitive film resin, and to provide a method for producing the semiconductor device.

The new photoresist material usable in a far ultraviolet region is provided, which is a copolymer obtained by copolymerization of bicycloalkene derivative with maleic anhydride or vinylene carbonate and having 3,000-100,000 molecular weight, and the copolymer has excellent etching resistance, heat resistance and adhesive property and also can be developed by using TMAH (tetramethylammonium hydroxide) solution of a developer.

JUNG JAE CHANG
BOK CHEOL KYU
BAIK KI HO

JP2007056463A

June 14, 2007

March 06, 2007

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HYNIX SEMICONDUCTOR INC

C08F232/08; C07C67/347; G03F7/004; C07C69/753; C08F2/00; C08F2/02; C08F2/06; C08F4/04; C08F4/34; C08F216/06; C08F222/06; C08F232/04; C08F234/02; C08K5/00; C08L45/00; G03F7/039; H01L21/027

JPH10218947A	1998-08-18
JP2002003542A	2002-01-09
JP2002003541A	2002-01-09

Eiji Saegusa
Kakehi Yuro
Jun Fujii

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