PHOTOSENSITIVE POLYMER FOR CEHMICAL AMPLIFCATION-TYPE RESIST AND CEHMICAL AMPLIFICATION-TYPE RESIST COMPOSITION

Japanese Patent JP3736994

B2

PROBLEM TO BE SOLVED: To obtain a resist composition, which is resistant to dry etching and is adapted for lithography using an ArF exima laser, by comprising a specific type of photosensitive polymer for chemical amplification-type resist and a photo acid-generator.
SOLUTION: One to fifteen wt.% of a photo acid generator and, if necessary, 0.01 to 2.0 wt.% of an organic base and 1 to 20 wt.% of an inhibitor of dissolution are compounded in a photosensitive polymer of the formula for chemical amplification-type resist having a weight average molecular weight of 3,000 to 100,000. In the formula, R1 represents H, a 1-20C aliphatic hydrocarbon group or a 7-20C alicyclic hydrocarbon group, R2 represents t-butyl, tetrahydropiranyl or a 1-alkoxyethyl, 1/(1+m+n) is 0.0 to 0.4, m/(1+m+n) is 0.5 and n/(1+m+n) is 0.1 to 0.5. This polymer is obtained by subjecting 2,3-di-t-butoxycarbonyl-5- norbornene and the like, and maleic anhydride to random polymerization in a solvent in an atmosphere of an inert gas.

JPH01204912	MANUFACTURE OF MALEIC ANHYDRIDE COPOLYMER PARTICLE
JPH0260909	THERMOSETTING WATER-SOLUBLE RESIN AND CURED PRODUCT THEREOF

Cui Ai Shun

JP23138699A

January 18, 2006

August 18, 1999

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Samsung Electronics Co.,Ltd.

C08F222/06; G03F7/004; C08F232/08; G03F7/031; G03F7/039; (IPC1-7): C08F222/06; C08F232/08; G03F7/039

JP11279122A
JP11269234A
JP2000038416A

Mikio Hatta
Atsushi Nogami
Yasuo Nara
Etsuko Saito

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