Title:
光電池
Document Type and Number:
Japanese Patent JP4121148
Kind Code:
B2
Abstract:
A photovoltaic cell having a charge transport layer comprising a hole conductor material is disclosed and claimed. The photovoltaic cell comprising a light absorbing layer having a semiconductor material with a bassed gap of at least 3.0 Ev, the surface of the semiconductor having a roughness of >20, optionally a sensitizer layer, a charge transport layer comprising one or more spiro compounds of the formula (I) as a hole conductor material (I) where PSI is C, Si, Ge or Sn, and K1 and K2, independently of one another, are conjugated systems, and a counter electrode.
Inventors:
Report, Donald
Zalbek, Joseph
Zalbek, Joseph
Application Number:
JP51164197A
Publication Date:
July 23, 2008
Filing Date:
September 09, 1996
Export Citation:
Assignee:
Merck Patent Gesellschaft mit beschraenkter Haftung
International Classes:
H01L31/04; H01M14/00; C07C13/72; C07C17/12; C07C25/22; H01L31/0256; H01L31/06; H01L51/00; H01L51/30
Domestic Patent References:
| JP6122277A | ||||
| JP1220380A |
Attorney, Agent or Firm:
Kazuo Shamoto
Shinjiro Ono
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Okimoto Kazuaki
Ken Matsumoto
Koji Hirayama
Takamasa Soma
Shinjiro Ono
Yasushi Kobayashi
Akio Chiba
Hiroyuki Tomita
Okimoto Kazuaki
Ken Matsumoto
Koji Hirayama
Takamasa Soma
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