Title:
PHOTOTHYRISTOR ELEMENT AND BIDIRECTIONAL PHOTOTHYRISTOR ELEMENT
Document Type and Number:
Japanese Patent JP3844330
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To obtain a bidirectional photothyristor element wherein photosensitivity is high, high speed response is enabled and high noise withstanding characteristic is afforded.
SOLUTION: In a planer type bidirectional photothyristor element which has a thyristor of a PNPN structure constituted of a PNP transistor Tr1 and an NPN phototransistor Tr2 on an Si substrate 1, hFE of the NPN phototransistor Tr2 is increased by using an SiGe layer as a base region 3a of the NPN phototransistor Tr2. hFE of the PNP phototransistor Tr1 is restrained by mechanically polishing 17 a rear of the substrate 1 or disposing a polysilicon film. In a VP circuit for driving a MOSFET Tr3, hFE of a phototransistor Tr4 is increased by using the SiGe layer as a base region 7a of the phototransistor Tr4.
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Inventors:
Kariyama Man
Application Number:
JP2000152210A
Publication Date:
November 08, 2006
Filing Date:
May 23, 2000
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L29/74; H01L21/06; H01L21/822; H01L27/06; H01L29/161; (IPC1-7): H01L29/74; H01L21/06; H01L21/822; H01L29/161
Domestic Patent References:
| JP11045993A | ||||
| JP2001036070A | ||||
| JP62165980A |
Attorney, Agent or Firm:
Hidesaku Yamamoto
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