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Title:
PHOTOTRANSISTOR
Document Type and Number:
Japanese Patent JP3088815
Kind Code:
B2
Abstract:

PURPOSE: To provide a phototransistor having a good CMR characteristic, wherein no malfunction is generated by a displacement current when using it as the photodetector of a photocoupler.
CONSTITUTION: In a phototransistor, first and second guard ring layers 9, 25 are provided along respective P-N junction parts 30, 35 of input stage and output stage transistors TR1, TR2, and the guard ring layers 9, 25 are connected electrically with an emitter electrode 24 of the output stage transistor TR2. Further, an emitter electrode 21 of the input stage transistor TR1 and a base electrode 23 of the output stage transistor TR2 are connected by a wiring layer 22 provided above the guard ring layers 9, 25 via an insulation layer.


Inventors:
Kenichi Nagata
Application Number:
JP49592A
Publication Date:
September 18, 2000
Filing Date:
January 07, 1992
Export Citation:
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Assignee:
Sharp Corporation
International Classes:
H01L31/10; H01L31/12; (IPC1-7): H01L31/10
Domestic Patent References:
JP2278773A
JP2253665A
Attorney, Agent or Firm:
Hisao Fukami