Title:
PHOTOVOLTAIC DEVICE
Document Type and Number:
Japanese Patent JP3196155
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To reduce the incident loss of light while decreasing the resistivity by forming an amorphous layer in a region on the light incident side of a photovoltaic device, where a translucent electrode is provided on the light incident side of a photoelectric conversion layer, and forming a polycrystalline layer in the region of the photoelectric conversion layer.
SOLUTION: A translucent electrode 2 is formed on ZnO on a glass substrate 1 and an amorphous translucent electrode layer 21 is formed on the glass substrate 1 on the light incident side and then a polycrystalline translucent electrode layer 22 is formed thereon. The translucent electrode layers 21, 22 are formed by reactive sputtering using ZnO as a target material. Since a region on the light incident side of the translucent electrode is in amorphous state, structural flexibility is enhanced at that part and structural strain on the interface can be absorbed. Consequently, a material of transparent electrode, e.g. SnO2, ITO or ZnO, being formed subsequent has a large grain size and the incident loss of light can be reduced while decreasing the resistivity and the thickness.
Inventors:
Masaaki Kameda
Hashimoto Haruhi
Hisao Shiraku
Katsunobu Sayama
Hashimoto Haruhi
Hisao Shiraku
Katsunobu Sayama
Application Number:
JP4781697A
Publication Date:
August 06, 2001
Filing Date:
March 03, 1997
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01L31/10; H01L31/04; (IPC1-7): H01L31/04; H01L31/10
Domestic Patent References:
| JP62213281A | ||||
| JP6255127A | ||||
| JP639158A | ||||
| JP59161882A | ||||
| JP8174764A |
Attorney, Agent or Firm:
Hiroshi Torii