Title:
PHOTOVOLTAIC DEVICE
Document Type and Number:
Japanese Patent JP3490964
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve photoelectric conversion efficiency by reducing recombination of optically formed carriers in a junction, in a photovoltaic device wherein thin films 12, 13 of intrinsic amorphous semiconductor are inserted in the junction of a crystal based semiconductor substrate 11 and an amorphous semiconductor film 14 which have relation of mutually opposite conductivity types.
SOLUTION: Optical band gaps of the intrinsic amorphous semiconductor films 12, 13 become wide on the side which is in contact with the amorphous semiconductor film 14.
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Inventors:
Noboru Nakamura
Mikio Taguchi
Kunihiro Kawamoto
Mikio Taguchi
Kunihiro Kawamoto
Application Number:
JP2000268199A
Publication Date:
January 26, 2004
Filing Date:
September 05, 2000
Export Citation:
Assignee:
Sanyo Electric Co., Ltd.
International Classes:
H01L31/04; H01L27/15; H01L31/06; H01L31/065; H01L31/072; H01L31/0745; H01L31/0747; H01L31/075; H01L31/12; H01L31/20; (IPC1-7): H01L31/04
Domestic Patent References:
| JP6291343A | ||||
| JP6291342A | ||||
| JP2260664A | ||||
| JP4286167A | ||||
| JP548130A | ||||
| JP5975682A | ||||
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| JP5867073A | ||||
| JP384966A | ||||
| JP7142753A | ||||
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| JP823114A |
Attorney, Agent or Firm:
Contents Makoto (1 person outside)
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