Title:
Photovoltaic device
Document Type and Number:
Japanese Patent JP5919559
Kind Code:
B2
Abstract:
A photovoltaic device is provided having a semiconductor substrate (10), an i-type amorphous layer (12i) formed over a front surface of the semiconductor substrate (10), a p-type amorphous layer (12p) formed over the i-type amorphous layer (12i), an i-type amorphous layer (16i) formed over a back surface of the semiconductor substrate (10), and an n-type amorphous layer (16n) formed over the i-type amorphous layer (16i). The i-type amorphous layer (12i) and the i-type amorphous layer (16i) have oxygen concentration profiles in which concentrations are reduced in a step-shape from regions near interfaces with the semiconductor substrate (10) and along a thickness direction, and an oxygen concentration in the step-shape portion of the i-type amorphous layer (12i) is higher than an oxygen concentration in the step-shape portion of the i-type amorphous layer (16i).
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Inventors:
Ayumu Yano
Akane Ogane
Akane Ogane
Application Number:
JP2011145143A
Publication Date:
May 18, 2016
Filing Date:
June 30, 2011
Export Citation:
Assignee:
Panasonic IP Management Co., Ltd.
International Classes:
H01L31/0747
Domestic Patent References:
| JP2008235400A | ||||
| JP2003258287A | ||||
| JP2002329878A |
Other References:
T.Mueller,"Crystalline silicon surface passivation by high-frequency plasma-enhanced chemical-vapor-deposited nanocomposite silicon suboxides for solar cell applications",Journal of Applied Physics,Vol.107, No.1, 5 January 2010,014504
H.Fujiwara,"Application of hydrogenated amorphous silicon oxide layers to c-Si heterojunction solar cells",Applied Physics Letters,Vol.91, No.13, 26 September 2007,133508
H.Fujiwara,"Application of hydrogenated amorphous silicon oxide layers to c-Si heterojunction solar cells",Applied Physics Letters,Vol.91, No.13, 26 September 2007,133508
Attorney, Agent or Firm:
Patent Corporation yki International Patent Office