Title:
PHOTOVOLTAIC DEVICE
Document Type and Number:
Japanese Patent JPH04253379
Kind Code:
A
Abstract:
PURPOSE:To eliminate damage to an a-Si layer when a rear surface electrode is formed by a sputtering method. CONSTITUTION:When a transparent electrode 2 and an a-Si layer 3. are formed on a glass board 1 and a rear surface electrode is further formed by a sputtering method, the rear surface electrode is formed of a W layer of about 10-60Angstrom and an Al layer. Since the a-Si layer is not damaged even if the rear surface electrode is formed by the sputtering method, a photovoltaic device having the rear surface electrode of uniform thickness can be provided without reducing characteristics.
More Like This:
Inventors:
SAWADA KENJI
KOJIMA NAOKI
KAWANISHI YASUYOSHI
OTSUKI MASATOSHI
TAKAHASHI OSAMU
KOJIMA NAOKI
KAWANISHI YASUYOSHI
OTSUKI MASATOSHI
TAKAHASHI OSAMU
Application Number:
JP933191A
Publication Date:
September 09, 1992
Filing Date:
January 29, 1991
Export Citation:
Assignee:
SANYO ELECTRIC CO
International Classes:
H01L31/04; (IPC1-7): H01L31/04
Attorney, Agent or Firm:
Koji Yasutomi (1 person outside)