Title:
PHOTOVOLTAIC DEVICE
Document Type and Number:
Japanese Patent JPS59115572
Kind Code:
A
Abstract:
PURPOSE:To obtain small-sized large-output device by forming an amorphous Si layer with a plurality of separated metal films on the same substrate, attaching lattice metal electrode film through transparent electrodes, and connecting in series generating zones. CONSTITUTION:Films 11-13 having extensions with Mo, Ti or other prescribed metal are selectively etched and formed on a glass plate 10. Then, unnecessary parts are covered with masks to form amorphous Si layer 14 to become generating zones. The layer 14 is formed by glow discharge from the atmosphere such as SiH4, and a pin structure is formed. Then, electrodes 15, 17 are selectively formed with ITO, unnecessary parts as masks lattice electrodes 18-20 having extensions 24 are eventually attached again with Mo, Ti. When a light is entered to an amorphous Si 14 from the electrodes 15-17, photovoltaic voltage is produced, thereby obtaining a voltage collected between projections 21 of the film 11 and the extensions 24 of the lattice electrode 20 on the electrode 17. According to this configuration, a photovoltaic device which has small size and large current capacity can be obtained.
Inventors:
UTAGAWA TADASHI
HATAYAMA TAMOTSU
KAMIMURA TAKAAKI
NOZAKI HIDETOSHI
HATAYAMA TAMOTSU
KAMIMURA TAKAAKI
NOZAKI HIDETOSHI
Application Number:
JP22506182A
Publication Date:
July 04, 1984
Filing Date:
December 23, 1982
Export Citation:
Assignee:
TOSHIBA KK
International Classes:
H01L31/042; H01L31/0224; H01L31/0465; H01L31/05; H01L31/075; H01L31/18; (IPC1-7): H01L31/04
Domestic Patent References:
| JPS56130977A | 1981-10-14 | |||
| JPS55107276A | 1980-08-16 | |||
| JPS5463690A | 1979-05-22 | |||
| JPS56100486A | 1981-08-12 |
Attorney, Agent or Firm:
Noriyuki Noriyuki