To provide a piezoelectric element whose piezoelectric layer has good crystallinity and excellent piezoelectric properties.
The piezoelectric element 100 includes a first electrode 10, a second electrode 20 disposed opposite the first electrode 10, and the piezoelectric layer 30 disposed between the first electrode 10 and second electrode 20 and formed of a compound oxide containing at least lead, zirconium, titanium, and oxygen, wherein the piezoelectric layer 30 includes a first crystal layer 32 disposed at an end of the piezoelectric layer 30 on the side of a first electrode 10 and a second crystal layer 34 continuing with the first crystal layer 32 and disposed closer to the second electrode 20 than to the first crystal layer 32. The concentration of lead of the piezoelectric layer 30 is lower on a first-electrode-10 side of the first crystal layer 32 than on a second-electrode-20 side of the second crystal layer 34; and the concentration of oxygen of the piezoelectric layer 30 is higher on the first-electrode-10 side of the first crystal layer 32 than on the second-electrode-20 side of the first crystal layer 34.
| JP2003179210A | 2003-06-27 | |||
| JP2007000994A | 2007-01-11 | |||
| JP2002234709A | 2002-08-23 | |||
| JP2000244030A | 2000-09-08 | |||
| JP2002026284A | 2002-01-25 |
Mitsue Obuchi
Misa Nagata
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