To prevent the deterioration of the retention and film fatigue characteristics of a piezoelectric element by using an alloy containing two or more platinum group elements selected from among platinum, palladium, iridium, rhodium, osmium, and ruthenium as the main component of at least one of the electrodes of the element.

A platinum-palladium film 101 is formed on a first interlayer insulating film 102 formed on a substrate and a lower electrode is formed by etching the film 101 by using a photoresist as a mask and removing the photoresist. Then, after an SrTiO3 high dielectric film is formed, a dielectric film 103 is formed by etching the SrTiO3 film through a photoprocess similarly to the lower electrode. In addition, an upper electrode 104 is formed by forming a platinum-palladium film and etching the platinum-palladium film by using a photoresist as a mask similarly to the lower electrode. Thereafter, a dielectric device is obtained by forming a contact hole to the upper electrode 104 and an Al wiring layer 105.