To suppress the degradation of a Q value while improving temperature characteristics in a piezoelectric resonator.

The piezoelectric resonator is provided with a lower electrode 24 formed on a substrate 11, a piezoelectric film 23 formed on the lower electrode 24, an upper electrode 25 which is formed on the piezoelectric film 23 and obtains a signal at a prescribed resonant frequency in cooperation with the lower electrode 24 by a bulk wave propagated inside the piezoelectric film 23; and an acoustic multilayered reflection film 28 which is composed of an SiO2 film 28a having prescribed acoustic impedance alternately laminated and formed on the upper electrode 25, and an AlN film 28b having higher acoustic impedance than the SiO2 film 28a and in which the SiO2 film 28a is in contact with the upper electrode 25 and reflects the bulk wave.