To provide a pinhole mask which has a high-precision pinhole shape, high light-shielding property and satisfactory surface precision.

A resist 3 is applied on a SiN thin film 2 (d), a part of the resist where a pinhole is to be formed is exposed by means of EB plotting, the resist is developed and, thereby, the pinhole 4 is formed. Then, according to RIE etching using the remaining resist 3 as a mask, a pinhole 5 is also formed on the SiN thin film 2 (f). Thereafter, the remaining resist 3 is removed by dry etching. Thereby, a membrane consisting of the SiN thin film 2 having the pinhole is completed (g). Thereafter, a metal thin film 6, consisting of two kinds or more metals, is formed on both surfaces of the membrane consisting of the SiN thin film 2 by means of vapor deposition or sputtering. At this time, a pinhole 7 is also formed on the formed metal thin film (h).