Title:
PLANAR THYRISTOR MANUFACTURING PROCESS
Document Type and Number:
Japanese Patent JPS5224476
Kind Code:
A
Abstract:
PURPOSE: Improve high temperature, long thermal processing time and other troubles connected thereto when forming diffusion region penetrating semiconductor substrate.
Inventors:
KUSAKA TERUO
Application Number:
JP10087175A
Publication Date:
February 23, 1977
Filing Date:
August 20, 1975
Export Citation:
Assignee:
NIPPON ELECTRIC CO
International Classes:
H01L29/74; H01L29/04; (IPC1-7): H01L29/04; H01L29/74