Title:
PLANAR-TYPE PHOTODETECTOR
Document Type and Number:
Japanese Patent JPH02249282
Kind Code:
A
Abstract:
PURPOSE:To position a pn junction at the interface between a window layer and a light-absorbing layer and obtain a light-receiving element without any deterioration of response speed by laminating a window layer consisting of a second conductivity type semiconductor layer on a light-absorbing layer consisting of a first-conductivity type semi conductor layer and then by inverting the periphery of region which becomes the light-receiving region of this window layer by introducing impurities into a first conductivity type. CONSTITUTION:A hetero pn junction is formed at the interface between a light- absorbing layer 3 and a window layer 4 by al lowing a p-type InP window layer 4 with a larger band gap than an ntype InP buffer layer 2, an n-type InGaAs light-absorbing-layer 3, and the light-absorbing layer to be subjected to epitaxial growth on an n-type InP substrate 1. Si is ion-implanted and annealed at areas other than the light-receiving part of a wafer to be subjected to epitaxial growth with an SiO8 film 6 as a mask and a p-type window layer (Si ion implanting region 5) is inverted into n-type one to leave the pn junction formed by the epitaxial growth only at the light-receiving part.
Inventors:
NAKANO KOJI
Application Number:
JP27219088A
Publication Date:
October 05, 1990
Filing Date:
October 27, 1988
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L31/10; (IPC1-7): H01L31/10
Attorney, Agent or Firm:
Uchihara Shin