To provide an inexpensive plasma etching device having a long life as a whole without limiting an etching processing region of a semiconductor wafer whereby a dielectric layer of an electrostatic chuck can be readily formed as an extremely thin layer by an SiC coating layer which resists plasma wherein electrostatic attraction force is easy to control.

A plane-like base stand for plasma etching for mounting and holding a semiconductor wafer 5 during plasma etching process is formed by preparing a base part 30 of a conductive material with a flat mounting surface as a whole for mounting the semiconductor wafer 5, forming a polycarbosilane layer by providing polycarbosilane solution to cover at least the mounting surface of the base part 30 and forming an SiC coating layer 33 by baking the polycarbosilane layer thereafter.