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Patent Searching and Data


Title:
プラズマCVD成膜装置
Document Type and Number:
Japanese Patent JP3595853
Kind Code:
B2
Abstract:
A plasma CVD film-forming device forms a film on a semiconductor substrate in such as way that the film quality and film thickness of a thin film becomes uniform. The plasma CVD film-forming device to form a thin film on a semiconductor substrate includes a vacuum chamber, a showerhead positioned within the vacuum chamber, and a susceptor positioned substantially in parallel to and facing the showerhead within the vacuum chamber and on which susceptor the object to be processed is loaded and the central part of the showerhead and/or the susceptor constitutes a concave surface electrode.

Inventors:
Nobuo Matsuki
Yoshiki Mori
Application Number:
JP7294499A
Publication Date:
December 02, 2004
Filing Date:
March 18, 1999
Export Citation:
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Assignee:
Japan ASM Co., Ltd.
International Classes:
H01L21/68; C23C16/44; C23C16/455; C23C16/50; C23C16/505; C23C16/509; H01J37/32; H01L21/205; H01L21/31; (IPC1-7): H01L21/205
Domestic Patent References:
JP314228A
JP9115840A
JP9320799A
JP399767U
JP6413119U
Attorney, Agent or Firm:
Sumio Takeuchi
Akira Hori