Title:
PLASMA APPARATUS AND DRY ETCHING METHOD USING IT
Document Type and Number:
Japanese Patent JP3399169
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a dry etching method which prevents a WSix film from being side-etched by excessive O* when a W-polycide film (a polysilicon/WSix multilayer film) is etched by using a plasma apparatus comprising a chamber inside member in which a plasma contact face is made of quartz or by making use of an inorganic material pattern as a mask.
SOLUTION: Cl2 gas is introduced into a triode-type plasma etching apparatus in which the surface of a sidewall electrode 9 is covered with a quartz RF electrode cover 12 in order to prevent metal contamination, and a W-polycide film is etched by making use of an offset SiOx film pattern as a mask. O* which is sputtered and discharged from the RF electrode cover 12 is an important chemical species which generates a reaction product WClxOy whose vapor pressure is high. However, since its excessive portion impedes an anisotropic working operation, it is captured by carbon which is sputtered and discharged from an SiC grounding electrode cover 6 which covers an upper-part grounding electrode 2, and it is evacuated as COx to the outside of a system.
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| JPH0547716 | ETCHING METHOD AND APPARATUS THEREFOR |
| JPH06275569 | ETCHING METHOD OF ORGANIC MATERIAL FILM |
Inventors:
Tetsuya Tatsumi
Application Number:
JP19640895A
Publication Date:
April 21, 2003
Filing Date:
August 01, 1995
Export Citation:
Assignee:
ソニー株式会社
International Classes:
C23F4/00; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065; C23F4/00
Domestic Patent References:
| JP6302548A | ||||
| JP5315289A | ||||
| JP2155230A | ||||
| JP53179A | ||||
| JP5982729A | ||||
| JP7169739A |
Attorney, Agent or Firm:
Akira Koike (2 outside)