To provide a plasma CVD apparatus which can form a thin film having stable characteristics by reducing an electric current which passes on a film substrate and flows in a substrate-transporting direction, thereby reducing mutual interference among a plurality of electrodes when they are arranged, and reducing an electric current flowing from a transport roll to a reaction vessel and controlling current density at a current-concentrating part that is locally formed in the film to a small value to reduce a damage of the film by burning or the change of the film quality.
The plasma CVD apparatus, which has two electrodes 5 and 6 arranged so as to face each other in the reaction vessel 1 into which a source gas is introduced, supplies a high-frequency power to one of the two electrodes 5 and 6 to generate plasma 8, and decomposes the source gas to form the thin film on the surface of the film substrate 7 that is transported between the two electrodes 5 and 6, includes a conductive ring 21 which is arranged on both sides that are located outside of the two electrodes 5 and 6 in the transportation direction of the substrate, and has such a structure as to surround the film substrate 7.
FUJII MIKISUKE
SHIMIZU HITOSHI
Arihara Koichi
Matsushima Tetsuo
Hidefumi Kawamura
Naomi Yoshida
Ayako Nakamura