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Title:
PLASMA CVD APPARATUS
Document Type and Number:
Japanese Patent JPH0252423
Kind Code:
A
Abstract:

PURPOSE: To heat a wafer to a uniform temperature and to enhance a yield by a method wherein a quartz sheet having a plurality of holes used to blow an inert gas is installed around a uniform-heating sheet.

CONSTITUTION: A reaction gas discharged from a reaction-gas control part 1 is passed through a gas blowoff sheet 2 and comes into contact with a water 4 supported by means of a wafer support jig 3. Heat from a heater 5 heats a uniform-heating sheet 6; in addition, a quartz sheet 8 having many holes 10 used to blow an inert gas such as N2 or the like introduced from an inert gas control part 7 is installed around the uniform-heating sheet 6. The reaction gas which has reached the neighborhood of the uniform-heating sheet 6 in this manner does not come into contact with the uniform-heating sheet 6 and the quartz sheet 8 thanks to the inert gas blown off from the quartz sheet 6. Accordingly, a reaction product does not adhere to the uniform-heating sheet 6, and a coating material is not stripped off. Since the quartz sheet 8 itself conducts heat well, no proble is caused even when the sheet is installed between the wafer 4 and the uniform-heating sheet 6.


Inventors:
OSAKI MINORU
Application Number:
JP20534788A
Publication Date:
February 22, 1990
Filing Date:
August 17, 1988
Export Citation:
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Assignee:
KYUSHU NIPPON ELECTRIC
International Classes:
B08B5/00; B08B17/02; H01L21/205; H01L21/31; H01L21/324; (IPC1-7): B08B5/00; B08B17/02; H01L21/205; H01L21/31; H01L21/324
Attorney, Agent or Firm:
Uchihara Shin



 
Next Patent: JPH0252424