To provide a plasma CVD device and a method allowing a high-quality thin film to be formed with excellent film thickness uniformity on a larger substrate.
The plasma CVD device includes: an inductively coupling electrode of a linear shape or a shape folded back at its center arranged in a reaction chamber; and a feeding part for high frequency power and a grounding part respectively provided on both ends of the inductively coupling electrode, wherein the plasma CVD device is configured to feed the high frequency power so that a standing wave of a half-wave length or an integral multiple thereof is established between the feeding part and the grounding part or between the feeding part/the grounding part and the turning portion, and wherein an electrode diameter of the inductively coupling electrode is changed, the electrode diameter of at least a part between the feeding part and the grounding part is made to be 10 mm or smaller, or the electrode is coated with a dielectric.
| JP2011157571 | SUBSTRATE PROCESSING APPARATUS |
| JP2012182221 | SUBSTRATE SUPPORTING MEMBER |
| JP2020535625 | ICP antenna and plasma device |
UEDA HITOSHI
| JPH11243062A | 1999-09-07 | |||
| JPH11317299A | 1999-11-16 | |||
| JPH09268370A | 1997-10-14 | |||
| JPH10189293A | 1998-07-21 | |||
| JP2000091236A | 2000-03-31 | |||
| JP2000073174A | 2000-03-07 | |||
| JP2000232070A | 2000-08-22 |
Iwa Saki Kokuni
Masakazu Ito
Shunichi Takahashi
Toshio Takamatsu