PURPOSE: To reduce a difference in film quality by providing the heater part divided into plural regions corresponding to the wafers set on a wafer holder and plural supply voltage control parts independently controlling each region of the heater part.

CONSTITUTION: The heater part 2 is divided into three regions 3a, 3b and 3c corresponding to the sample base carrier openings 7a and 7b of a chamber 1 so as to be independently connected to the supply voltage control parts 5a, 5b and 5c respectively. At the time of deposition treatment, the beforehand controlled output is supplied from the respective supply voltage control parts 5a, 5b and 5c to the respective heaters 3a, 3b and 3c to heat a wafer 9 set on a wafer holder 14 for removing temperature difference between the inside of the wafer 9 and the wafer 9 on the sample base 8 so as to be controlled at the uniform temperature. Thereby, a difference in film quality inside the wafer 9 and among themselves can be reduced less than a half compared with the past.