To provide a plasma CVD film forming method to suppress the influence on the film forming speed of a substrate surface heater as much as possible, and control the film forming speed to a desired value.
The plasma CVD film forming method comprises a process to hold and heat a substrate 3, a process to feed a reactive gas between an electrode 5 and the substrate, a process to apply the high frequency power to the electrode to generate the plasma of the reactive gas between the electrode and the substrate, a process to detect the plasma information via a power supply circuit of the substrate surface heater in heating a film forming surface of a substrate to be treated using a substrate surface heater surface-arranged with respect to the substrate during the plasma generation, and a process to form a film on the substrate by feedback-controlling the incident power to be supplied to the electrode based on at least one information of the high frequency induction voltage Vrf detected as the plasma information and the high frequency bias voltage Vb, to realize the substantially uniform plasma density distribution over the whole electrode surface.
YAMAUCHI YASUHIRO
FUJIYAMA TAIZO
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