PLASMA CVD SYSTEM

Title:

PLASMA CVD SYSTEM

Document Type and Number:

Japanese Patent JPS631036

Kind Code:

A

Abstract:

PURPOSE: To maintain the uniformity of a growing film by devising the structure of the process gas ejecting holes of the shower electrode plate, thereby supplying gas to the peripheral portion more than to the central portion.

CONSTITUTION: The process gas ejecting holes 12 of a shower electrode plate (anode) 11 decrease from the periphery to the center. The ratio of the number of the holes 12 of the outermost periphery of the electrode plate 11 against the center is made to be on the order of 1.1W1.2. With this arrangement, since the reduction in film thickness due to escape of heat from the periphery of a tray 23 is compensated by increasingly supplying the gas, a CVD film of a uniform thickness is obtained both in wafers and between wafers.

Inventors:

SHIRAISHI YASUSHI

Application Number:

JP14411086A

Publication Date:

January 06, 1988

Filing Date:

June 20, 1986

Export Citation:

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Assignee:

NEC CORP

International Classes:

H01L21/205; C23C16/50; H01L21/31; (IPC1-7): C23C16/50; H01L21/205; H01L21/31

Attorney, Agent or Firm:

Sugano Naka

Next Patent: EPITAXIAL WAFER AND MANUFACTURE THEREOF