Title:
PLASMA DEVICE
Document Type and Number:
Japanese Patent JP3246800
Kind Code:
B2
Abstract:
PURPOSE: To provide a plasma device that processes work pieces uniformly by generating plasma of uniform density.
CONSTITUTION: A plasma device comprises a gate 102 for introducing the electron beam into a processing chamber 101, a sample support 108 set to allow a wafer 109 to be parallel with the direction of the electron beam introduced through the gate 102 and a processing surface of the wafer 109, and one or more axially symmetric electromagnet 104 set close to the gate 102 and permanent magnets 110 and 111 to branch off the magnetic fluxes generated by the cylindrical electromagnet 104. Process gas in the chamber 101 is irradiated with an electron beam to form a plasma for a predetermined processing of the wafer.
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Inventors:
Yuichiro Yamazaki
Gensuke Miyoshi
Okumura Katsuya
Gensuke Miyoshi
Okumura Katsuya
Application Number:
JP12900293A
Publication Date:
January 15, 2002
Filing Date:
May 31, 1993
Export Citation:
Assignee:
Toshiba Corporation
International Classes:
C23F4/00; C23F4/02; H01J27/18; H01J37/32; H01L21/203; H01L21/205; H01L21/302; H01L21/3065; H05H1/24; (IPC1-7): H01L21/3065; C23F4/00; H05H1/24
Domestic Patent References:
| JP1179325A | ||||
| JP2257625A | ||||
| JP4181727A |
Attorney, Agent or Firm:
Kazuo Sato (3 others)