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Title:
PLASMA ETCHING APPARATUS
Document Type and Number:
Japanese Patent JP2002252209
Kind Code:
A
Abstract:

To provide a plasma etching apparatus equipped with plasma proof members that can further improve the durability.

Plasma proof members such as a baffle plate 12, an insulating ring 13 and first and second bellows covers 14 and 15 are formed using yttrium fluoride (YF3).


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JP2003518196INDUSTRIAL APPLICABILITY A method for producing a low-density constituent material having a substrate of a polymer or a metal matrix, and a ceramic and / or metal-ceramic coating, and a low-density constituent material having a high surface strength thus obtained.
JPH0480306MANUFACTURE OF DOUBLE LAYERED SINTERED PARTS
JP2001517269INDUSTRIAL APPLICABILITY: A substrate coated with a wear-resistant non-adhesive resin.
Inventors:
NAGAYAMA MASAYUKI
MIHASHI YASUSHI
NAKAYAMA HIROYUKI
Application Number:
JP2001047278A
Publication Date:
September 06, 2002
Filing Date:
February 22, 2001
Export Citation:
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Assignee:
TOKYO ELECTRON LTD
International Classes:
C23C4/04; H01J37/32; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065; C23C4/04
Domestic Patent References:
JPH11229185A1999-08-24
JP2000306845A2000-11-02
JP2000219574A2000-08-08
JP2000252351A2000-09-14
JP2002037683A2002-02-06
Attorney, Agent or Firm:
Toshihiko Watanabe



 
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