PURPOSE: To equalize etching by installing a substrate in the vicinity of the resonance point of electronic cyclotron resonance point, and besides, applying FR bias of 40KHz.
CONSTITUTION: The high-speed anisotropic etching of an Al metallic film or an Si substrate can be materialized uniformly with single Cl2 gas even on the level of 10-4Torr by applying 40KHzRF bias to the substrate installed on an electronic cyclotron resonance point 5. Furthermore, in the etching of Al alloy, it can be etched on the level of 10-4Torr, so it also has the effect of post corrosion being hard to occur on the sidewall of a pattern, since the adsorption of Cl2 onto the sidewall is little. Hereby, the high-speed etching on the level of 10-4Torr is possible, and complete anisotropic etching can be materialized even with single Cl2 gas.
NAKAGAWA KOJIN
WANI ETSUO
