Title:
PLASMA ETCHING EQUIPMENT
Document Type and Number:
Japanese Patent JP3670413
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To improve ionization efficiency by coating the outer periphery of a chamber with a reflecting film for shielding the radiation of plasma, there by shielding the plasma to be radiated outside the chamber.
SOLUTION: The outer periphery of a chamber 10 in which plasma gas for etching a wafer is injected is coated with a reflecting film 20 for shielding the radiation of plasma. A coil 30 to which a voltage having a specified level is supplied is wound on the outer periphery of a chamber 10 coated with the reflecting film 20. For example, a metal film composed of aluminum, silver, etc., is used as the reflecting film 20. When a wafer is etched, it is stably fixed inside the chamber 10, plasma gas is injected into the chamber 10, and a specified voltage is supplied to the coil 30 by operating a generator. Therefore, an energy loss is reduced, and plasma of higher density can be maintained.
Inventors:
Lee Teru Ken
Application Number:
JP26401396A
Publication Date:
July 13, 2005
Filing Date:
October 04, 1996
Export Citation:
Assignee:
Samsung Electronics Co.,Ltd.
International Classes:
H01L21/302; H01J37/32; H01L21/20; H01L21/3065; (IPC1-7): H01L21/3065
Domestic Patent References:
| JP7153748A | ||||
| JP63156533A |
Attorney, Agent or Firm:
Hidekazu Miyoshi