To prevent defects from occurring in an etching process by monitoring the in-plane distribution of the emission intensity in a treating chamber to detect the variation of etching characteristics.
A treating chamber 1 contains a lower and upper electrodes 2, 3. An etching gas is fed from a gas feed system 4, a vacuum exhaust system 5 is controlled for a specified pressure in the chamber 1, a high frequency power source 6 feeds a power to generate a plasma between the electrodes, thereby etching a wafer 8 on the lower electrode 2 with a plasma emission passed through a window glass 9, a cylindrical lens 10 compresses the quantity of the light in the height direction and guides it to a photo-detector 11 which uses a linear sensor to observe the plasma between the electrodes from one direction parallel to Y-Y', thereby detecting the emission intensity at each of points on the Y-Y' axis. Thus it is possible to detect the variation of the plasma 7 in the chamber 1 to prevent defects from occurring in an etching process.
| JPS5989774 | DRY ETCHING DEVICE |
| JP2764035 | CONTINUOUS SPUTTERING METHOD |
| JP2002033297 | EXHAUSTING UNIT, MANUFACTURING TREATMENT EQUIPMENT AND EXHAUST SYSTEM |
KOBAYASHI HIDE
NAKADA TOSHIHIKO
SASAZAWA HIDEAKI
