PURPOSE: To meet the requirements for etching performances such as etching work shape, selection ratio and etching rate of a specimen.
CONSTITUTION: In order to etch a specimen 2 by leading a processing gas into a vacuum vessel 1 as a pressure reduced reaction vessel to lead in microwaves (b) for turning into plasma so that the ions and radicals produced in the plasma together with electrons may be used, the title device A1 maintains the electron density in the plasma (c) at about 2×109-1×1011cm-3 and/or the pressure in the vacuum vessel 1 at about 1-3mTorr. Simultaneously, the specimen 2 is impressed with high-frequency bias in high-frequency of about 100-700kHz and output of about 5-25W/cm2. In such a constitution, the title plasma etching method and device capable of meeting the requirements for etching performances can be obtained.
KINOSHITA TAKASHI
NOZAWA TOSHIHISA
UEDA HIROICHI
