PURPOSE: To realize etching treatment wherein copper residue is not present and selection ratio is high by a method wherein, when etching is performed by utilizing plasma, the etching treatment temperature of specified Al alloy is kept at a specified value.
CONSTITUTION: By a gas feeding means 60, chlorine system gas is introduced into a processing chamber; a part of the gas is discharged outside the chamber by a low pressure exhausting means; the inside of the chamber is adjusted to be at a specified etching treatment pressure. When Al alloy which contains 0.5-5% copper and has resist on the surface to be etched is arranged on the mounting surface of a sample stand 90, the chlorine system gas in the processing chamber is turned into plasma by a plasma generating means. A part of the surface to be etched of the Al alloy where the resist is not present is etched by utilizing plasma, and the temperature of the Al alloy is kept at 160-230°C. Thereby, the etching free from residue can be performed with high speed and high precision, and the selection ratio of Al alloy and resist being so high as 2 can be obtained.
NAWATA MAKOTO
SATO HITOAKI
UEYAMA KEIJI
| JPS61189643A | 1986-08-23 | |||
| JPS63288016A | 1988-11-25 | |||
| JPS63274147A | 1988-11-11 | |||
| JPS6432628A | 1989-02-02 | |||
| JPS60115226A | 1985-06-21 |
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