Title:
PLASMA ETCHING METHOD AND PLASMA TREATMENT DEVICE
Document Type and Number:
Japanese Patent JP2014003085
Kind Code:
A
Abstract:
To form holes and trenches having a high aspect ratio by plasma etching treatment.
In a method for subjecting a silicon oxide film layer 3 laminated on a wafer W to plasma etching treatment using a silicon mask formed on the silicon oxide film layer 3 as a mask 5, etching treatment of the silicon oxide film layer 3 is performed using a plasma of CF-containing gas, then an Si-containing material D is deposited on the mask 5 using a plasma of Si-containing gas, and thereafter etching treatment of the silicon oxide film layer 3 is again performed using a plasma of CF-containing gas in a state where the Si-containing material D is deposited on the mask 5 of silicon. A hole 200 having an aspect ratio of 60 or more is thereby formed.
Inventors:
WATANABE HIKARU
Application Number:
JP2012136093A
Publication Date:
January 09, 2014
Filing Date:
June 15, 2012
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/3065; H05H1/46
Attorney, Agent or Firm:
Koji Hagiwara
Tetsuo Kanamoto
Miaki Kametani
Tetsuo Kanamoto
Miaki Kametani
Previous Patent: MAGNETIC CORE AND METHOD FOR MANUFACTURING THE SAME
Next Patent: LIGHT IRRADIATION DEVICE AND EXPOSURE DEVICE
Next Patent: LIGHT IRRADIATION DEVICE AND EXPOSURE DEVICE