To provide a plasma etching method that suppresses occurrence of necking and bowing, and has a high etching rate and a high mask selection ratio.
There is provided the plasma etching method using a plasma etching device which has a lower electrode functioning as a placement table for a workpiece and an upper electrode arranged opposite the lower electrode, the plasma etching method including a first etching process of carrying out plasma etching using first processing gas including fluorocarbon-based gas; and an etching process of carrying out plasma etching using second processing gas including fluorocarbon-based gas by applying a negative DC voltage to the upper electrode so that the applied voltage is larger in absolute value in a period of a second condition under which high-frequency electric power for plasma generation is turned OFF than in a period of a first condition under which the high-frequency electric power for plasma generation is turned on while alternating the first condition and second condition, namely, a second etching process such that adhesion of a radical of the first processing gas to the workpiece is larger than that of a radical of the second processing gas to the workpiece.
YAMAZAKI FUMIO
MOCHIZUKI HIROMI
| JP2006278436A | 2006-10-12 | |||
| JP2003347281A | 2003-12-05 | |||
| JP2010219491A | 2010-09-30 | |||
| JP2008244144A | 2008-10-09 | |||
| JP2006278436A | 2006-10-12 |
Next Patent: SOLAR CELL MODULE WITH BACK RAIL AND INSTALLATION METHOD THEREOF