Title:
PLASMA ETCHING METHOD
Document Type and Number:
Japanese Patent JP2014195027
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a method of forming an etching structure having a predetermined tapered shape of which the diameter is reduced from an opening to a bottom.SOLUTION: An initial step P, a first processing step A, a second processing step B and a third processing step C are applied to a silicon substrate K. The processing steps A, B and C are the steps of implementing multiple times a cycle of successively repeating a protective film forming process and two etching processes. The first processing step A and the second processing step B are configured at least to gradually shorten a processing time, gradually decrease pressure within a processing chamber or gradually decrease power applied to a base in accordance with the repetition of the cycle in at least one of the two etching processes. The third processing step C is configured at least to prolong a processing time, increase pressure within the processing chamber or increase power applied to the base in accordance with the repetition of the cycle in at least one of the two etching processes.
Inventors:
SASAKURA MASAHIRO
YAMAMOTO TAKASHI
SENHO MITSUNARI
YAMAMOTO TAKASHI
SENHO MITSUNARI
Application Number:
JP2013071331A
Publication Date:
October 09, 2014
Filing Date:
March 29, 2013
Export Citation:
Assignee:
SPP TECHNOLOGIES CO LTD
International Classes:
H01L21/3065; H01L21/336; H01L29/78
Domestic Patent References:
| JP2009182059A | 2009-08-13 | |||
| JP2013046006A | 2013-03-04 |
Attorney, Agent or Firm:
Tomoji Murakami
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