Title:
PLASMA ETCHING SYSTEMS AND METHODS USING EMPIRICAL MODE DECOMPOSITION
Document Type and Number:
Japanese Patent JP2016213445
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a substrate etching system that resolves difficulty in detecting an endpoint of etching of a substrate, and a method therefor.SOLUTION: An etching control module 320 selectively begins plasma etching of a substrate within an etching chamber. During the plasma etching of the substrate, a filtering module 308 receives a signal including endpoint information; decomposes the signal using empirical mode decomposition (EMD); and generates a filtered signal on the basis of results of the EMD. An endpoint module 312 indicates when an endpoint of the plasma etching of the substrate has been reached on the basis of the filtered signal. The etching control module 320 ends the plasma etching of the substrate in response to the indication that the endpoint of the plasma etching of the substrate has been reached.SELECTED DRAWING: Figure 3
Inventors:
LUC ALBAREDE
YASSINE KABOUZI
JORGE LUQUE
ANDREW D BAILEY III
YASSINE KABOUZI
JORGE LUQUE
ANDREW D BAILEY III
Application Number:
JP2016081595A
Publication Date:
December 15, 2016
Filing Date:
April 15, 2016
Export Citation:
Assignee:
LAM RES CORP
International Classes:
H05H1/46; H01L21/3065
Attorney, Agent or Firm:
Meisei International Patent Office