Title:
PLASMA PROCESS APPARATUS
Document Type and Number:
Japanese Patent JP3221025
Kind Code:
B2
Abstract:
PURPOSE: To provide a title apparatus which can produce semiconductor devices with high yield by generating no particles.
CONSTITUTION: A plasma process apparatus 1 treats semiconductor wafers by using plasma and comprises a film forming chamber 10 and a heater 50 which can heat the film forming chamber 10.
Inventors:
Junichi Sato
Application Number:
JP35399891A
Publication Date:
October 22, 2001
Filing Date:
December 19, 1991
Export Citation:
Assignee:
ソニー株式会社
International Classes:
H01L21/205; C23C16/44; C23C16/511; (IPC1-7): H01L21/205
Domestic Patent References:
| JP4214873A | ||||
| JP5785220A | ||||
| JP58111312A | ||||
| JP59100514A | ||||
| JP61202423A |
Other References:
【文献】「金属プレス(特集・最新 FBテクノロジー」、Vol.20、No.7、1988、(日本金属プレス工業出版会)、第45~53頁
Attorney, Agent or Firm:
Takahisa Yamamoto