Title:
PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
Document Type and Number:
Japanese Patent JP2017208401
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a plasma processing apparatus and a plasma processing method which enable highly accurate process control based on an idea different from a conventional one.SOLUTION: A plasma processing apparatus comprises: a chamber 1 which houses a processing target; plasma generating mechanisms 2, 6, and 17 which generate plasma in the chamber 1; a gas supply mechanism 11 which supplies gas for generating the plasma in the chamber 1; temperature measurement means 20 which measures the temperature of a component that comes into contact with the plasma generated by the plasma generating mechanisms 2, 6, and 17; pressure adjustment means 28 which adjusts the pressure in the chamber 1; and a control unit 30 which controls, on the basis of temperature information from the temperature measurement means 20, the pressure in the chamber in such a manner that the variation in the number of gas particles in the plasma may be minimized while the processing target is subjected to plasma processing.SELECTED DRAWING: Figure 1
Inventors:
KOSHIMIZU CHISHIO
MATSUDO TATSUO
MATSUDO TATSUO
Application Number:
JP2016098549A
Publication Date:
November 24, 2017
Filing Date:
May 17, 2016
Export Citation:
Assignee:
TOKYO ELECTRON LTD
International Classes:
H01L21/3065; C23C16/50; C23C16/52; H01L21/205; H01L21/31; H05H1/46
Attorney, Agent or Firm:
Hiroshi Takayama