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Title:
PLASMA PROCESSING APPARATUS
Document Type and Number:
Japanese Patent JP2004186532
Kind Code:
A
Abstract:

To provide a plasma processing apparatus having a high processing speed and high uniformity.

First inlets 611 to 614 each for discharging first gas for a plasma are provided in a discharge space formed of first and second discharge electrodes 71, 721 to 724, and second inlets 621 to 623 each for discharging second gas having reactivity are provided at positions between the discharge space and an object 8 to be processed. The surface of the object 8 to be processed is irradiated with the plasma from the discharge space. When the second gas is blown from the second inlets 621 to 623, a chemical reaction is advanced on the surface or near the surface of the object 8 to be processed, and oxidizing, nitriding, etching or plasma processing of a film formation, etc. can be performed at a high speed.


Inventors:
Takei, Hideo
Ikeda, Satoshi
Ukishima, Yoshiyuki
Sakio, Susumu
Ishibashi, Akira
Ikeda, Hitoshi
Application Number:
JP2002000353396
Publication Date:
July 02, 2004
Filing Date:
December 05, 2002
Export Citation:
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Assignee:
ULVAC JAPAN LTD
International Classes:
H05H1/46; B01J3/00; B01J19/08; C23C16/455; H01L21/3065; H01L21/31; (IPC1-7): H01L21/31; B01J3/00; B01J19/08; C23C16/455; H01L21/3065; H05H1/46
Attorney, Agent or Firm:
石島 茂男
阿部 英樹