Title:
PLASMA PROCESSING APPARATUS
Document Type and Number:
Japanese Patent JP3962305
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To make a processing gas flow uniform along the lengths of a couple of electrodes in a plasma processing apparatus which introduces the processing gas into between opposite surfaces of the electrodes from their length-side edges.
SOLUTION: In a gas introducing device 11 of the plasma gas processing apparatus S1, a couple of pipes 41 and 42 (uniformizing path) are provided which gradually leak nearly half portions of the processing gas flow to an upper-side first stage chamber 11a while making them flow opposite each other along the lengths of electrodes 20. The gas leaking to the chamber 11a passes through narrow gaps 11c (communication path) on both right and left sides of the pipes 41 and 42 therefrom to flow to a lower-side second stage chamber and a final-stage chamber 11b. Then the gas is introduced in a space 20a between the electrodes 20 through an intake hole 10a.
Inventors:
Shinichi Kawasaki
Mayumi Satoshi
Mayumi Satoshi
Application Number:
JP2002254623A
Publication Date:
August 22, 2007
Filing Date:
August 30, 2002
Export Citation:
Assignee:
Sekisui Chemical Co.,Ltd.
International Classes:
H01L21/31; H05H1/24; B01J19/08; C23C16/44; (IPC1-7): H01L21/31; B01J19/08; C23C16/44; H05H1/24
Domestic Patent References:
| JP5109627A |