Title:
PLASMA PROCESSING DEVICE
Document Type and Number:
Japanese Patent JP2000164563
Kind Code:
A
Abstract:
To efficiently form high density plasma necessary for etching an oxide film, from the viewpoint of energy saving and costs reduction.
Microwave of a UHF band are emitted from the periphery of a disc-like plate antenna 5 to generate plasma due to electronic cyclotron resonance, and also the plate thickness of a gas supply plate 4 provided on a face at the plasma side of the antenna 5 is increased by more than the skin depth of the microwave. Since an oxide film is etched by the use of low electronic temperature high-density plasma, etching results of superior characteristics are obtained, and energy-saving and cost-reducing device can be obtained.
Inventors:
TAKAHASHI NUSHITO
SASAKI ICHIRO
MAEDA KENJI
SASAKI ICHIRO
MAEDA KENJI
Application Number:
JP33530798A
Publication Date:
June 16, 2000
Filing Date:
November 26, 1998
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065
Attorney, Agent or Firm:
Ogawa Katsuo