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Title:
PLASMA PROCESSING DEVICE
Document Type and Number:
Japanese Patent JP2016031956
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a plasma processing device which enables the increase in processing yield.SOLUTION: A plasma processing device comprises: a vacuum container; a process chamber disposed in the vacuum container, in which plasma is formed; a sample holder disposed under the process chamber, and having an upper surface on which a sample targeted for processing by the plasma is to be placed; a dielectric sintered plate forming a setting plane of the sample holder to put the sample on; a metal base material located under the sintered plate, and bonded to the sintered plate through an adhesion layer made of an adhesive; and a coolant flow path disposed in the base material, through which a coolant is circulated. A shear force produced in an outer peripheral part is made smaller than that created in a part of the adhesion layer located on the side of the center of the sample holder.SELECTED DRAWING: Figure 1

Inventors:
TANDO TAKUMI
MAKINO AKITAKA
KAWASAKI HIROMICHI
Application Number:
JP2014152486A
Publication Date:
March 07, 2016
Filing Date:
July 28, 2014
Export Citation:
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Assignee:
HITACHI HIGH TECH CORP
International Classes:
H01L21/3065; C23C16/458; H01L21/205; H01L21/683
Domestic Patent References:
JP2003142567A2003-05-16
JP2011176275A2011-09-08
JPH11274281A1999-10-08
JP2008041927A2008-02-21
JP2007110023A2007-04-26
JP2010129845A2010-06-10
JPH0945757A1997-02-14
Attorney, Agent or Firm:
Manabu Inoue
Yuji Toda
Shigemi Iwasaki