To prevent UV-rays generated from plasma from leaking outside, without affecting the state of plasma generated in the plasma generating chamber.

The plasma processing equipment is provided with a processing chamber 102 having a table 106 for mounting a wafer W, and a plasma generating chamber 104 interconnected therewith. The plasma generating chamber comprises a reaction vessel 140 having a tubular sidewall 142, a coil 116 wound around the sidewall and applied with predetermined high-frequency power, and a coating 150 covering the outer surface of the sidewall. The coating is constituted of a heat-resistant insulating material which shields the UV-rays from the plasma generated inside the reaction vessel.