Title:
プラズマ処理装置、プラズマ生成導入部材及び誘電体
Document Type and Number:
Japanese Patent JP4849705
Kind Code:
B2
Abstract:
A plasma processing apparatus applies a high-quality process to an object to be processed by preventing impurities from being generated due to a microwave transmitting through a dielectric plate. The dielectric plate is provided between a process chamber of a plasma processing apparatus and a slot electrode guiding a microwave used for a plasma process. A thickness H of the dielectric plate has a predetermined relationship with a wavelength lambd of the microwave in the dielectric plate so that an amount of isolation of the dielectric plate due to transmission of the microwave is minimized. The wavelength lambd is represented by lambd=lambd0n, where lambd0 is a wavelength of the microwave in a vacuum and n is a wavelength reducing rate of the dielectric plate represented by n=1/(epsit)½, where epsit is a specific dielectric rate of the dielectric plate in a vacuum.
Inventors:
Toshiaki Hongo
Satoshi Osawa
Satoshi Osawa
Application Number:
JP2000085264A
Publication Date:
January 11, 2012
Filing Date:
March 24, 2000
Export Citation:
Assignee:
東京エレクトロン株式会社
International Classes:
H01L21/31; H05H1/46; B01J19/08; C23C16/511; H01J37/32; H01L21/20; H01L21/302; H01L21/3065
Domestic Patent References:
| JP9289099A | ||||
| JP11111620A | ||||
| JP5152216A | ||||
| JP2000058294A | ||||
| JP11168090A |
Attorney, Agent or Firm:
Ryosuke Fujimoto